SBIR/STTR Research Award
DIAMOND P/N JUNCTION FORMATION FOR HIGH TEMPERATURE RADIATION RESISTANT ELECTRONICS
Award amount
$50,035Program and phase
SBIR · Phase IAward year
1989Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- Applied Sciences Inc.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- KFNNH3CBM7Q9
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
CRYSTALLINE DIAMOND HAS OUTSTANDING POTENTIAL FOR USE AS A HIGH TEMPERATURE RADIATION TOLERANT ELECTRONIC MATERIAL. RECENTLY A JAPANESE GROUP WAS ABLE TO GROW LARGE AREA N-TYPE AS WELL AS P-TYPE DIAMOND CRYSTALS BY DOPING DURING VAPOR PHASE GROWTH. THE PURPOSE OF THE PROPOSED RESEARCH IS TO GROW N-TYPE DIAMOND ON TOP OF P-TYPE DIAMOND TO FORM A PN JUNCTION, AND TO ASSESS THE QUALITY OF THE DIODES THUS FORMED. IF GOOD JUNCTIONS CAN BE DEMONSTRATED IN PHASE I THEN BIPOLAR TRANSISTOR FORMATION AND PERFORMANCE EVALUATION WILL BE MADE IN PHASE II.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Ceramic Fabrication with Control of Micrograin Structure via Nano Additives
- Protective Paint for Radar Absorbing Material Maintainability
- Nano Nucleation of Unique Long Range Order Materials via Seed Crystals
- Flexible, lightweight nanocomposites for EMI shielding suppression in automotive applications
- CO2 to Carbon and Water via Plasma Catalysis
Research funding history
128 SBIR/STTR records share this UEI (1987–2022). Reported award amounts total $29,010,302. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, Department of Energy, National Science Foundation, National Aeronautics and Space Administration, Environmental Protection Agency