SBIR/STTR Research Award

HIGH RESOLUTION SCANNING RF PROBE FOR SEMICONDUCTOR ELECTRICCONDUCTIVITY MEASUREMENTS

Award identifier f206e582612a6911ed1c7c915e13be633a64043710c34f6f98913f58e5e1a388Awarding agency National Science Foundation

Award amount

$40,000

Program and phase

SBIR · Phase I

Award year

1987

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
InterScience, Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
MTL5E2H5J946
Solicitation number
Not reported
Topic code
Not reported

Research abstract

ELECTRIC CONDUCTIVITY AND EXCESS CARRIER LIFETIME ARE TWO OFTHE MOST IMPORTANT PARAMETERS THAT DETERMINE THE PERFORMANCEOF SEMICONDUCTOR MATERIALS FOR APPLICATION AS PHOTODETECTORS. THE ABILITY TO OBTAIN NON-DESTRUCTIVE, HIGH RESOLUTION MEASUREMENTS OF THESE CHARACTERISTICS IS ONEOF THE BASIC PROBLEMS IN THE DEVELOPMENT AND FABRICATION OF SUCH MATERIALS. A TECHNIQUE TO MEASURE THE CONDUCTIVITY BASED ON SCANNING THE SAMPLES WITH A RF PROBE CAPABLE OF SPATIAL RESOLUTION OF A FEW MICRONS IS PROPOSED. BY MEASURING THE DECAY OF THE CONDUCTIVITY FOLLOWING EXCITATION BY A LIGHT PULSE, THE EXCESS CARRIER LIFETIME CAN ALSO BE DETERMINED. A PROGRAM TO DETERMINE THE LIMITINGSENSITIVITY AND RESOLUTION BY TWO VARIATIONS OF THE BASIC APPROACH IS PROPOSED FOR THE PHASE I EFFORT.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

84 SBIR/STTR records share this UEI (1984–2011). Reported award amounts total $18,838,228. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Health and Human Services, Department of Energy, National Science Foundation, National Aeronautics and Space Administration

Agency intelligence

National Science Foundation

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