SYNTHESIS OF LARGE-AREA MONOCRYSTALLINE TIC AS A SUBSTRATE FOR HETEROEPITAXIAL GROWTH OF B-SIC

THE OBJECTIVE OF THE PROGRAM IS TO SYNTHESIZE A LARGE-AREA, THIN-FILM OF MONOCRYSTALLINE TIC WHICH IS SUITABLE AS SUBSTRATE FOR THE HETEROEPITAXIAL GROWTH OF BETA-SIC. MONOCRYSTALLINE TIC CAN BE GROWN BY CHEMICAL VAPOR DEPOSITION ON A LATTICE-MATCHED SUBSTRATE. DIAMOND MATERIALS INSTITUTE INC (DMI) PLANS TO ACHIEVE THIS GOAL IN TWO PHASES. IN PHASE I, DMI PLANS TO DEMONSTRATE A NOVEL, STEP PROCESS FOR HETEROEPITAXIAL GROWTH OF TIC BY CVD. THE SUBSTRATE WILL BE A FREE-STANDING B-SIC SINGLE CRYSTAL HETEROEPITAXIALLY GROWN ON SI. DMI PROPOSES A NOVEL PROCESS TO GETTER CRYSTALLINE DEFECTS FROM THE B-SIC SURFACE BEFORE TIC DEPOSITION. REMOVAL OF CRYSTALLINE DEFECTS FROM THE SURFACE OF THE B-SIC SUBSTRATE SHOULD PREVENT NUCLEATION OF DEFECTS IN THE TIC. PHASE II WILL SCALE-UP THE PROCESS TO CREATE DEFECT-FREE, TIC MONOCRYSTALS AT LEAST 100 MM IN DIAMETER. PHASE II WILL INCLUDE HETEROEPITAXIAL GROWTH OF SEMICONDUCTOR-GRADE B-SIC ON THE MONOCRYSTALLINE TIC AND THE FABRICATION OF SEMICONDUCTOR DEVICES IN THE B-SIC.