SBIR/STTR Research Award

MBE Thin Film Formation Using Nitrogen Source

Award identifier b40bcc0a7df4ab1bcf184e77477f73b52281d65fccd7b0e0c64bed68183bf976Awarding agency Department of Defense · Missile Defense Agency

Award amount

$59,953

Program and phase

SBIR · Phase I

Award year

1995

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
IONWERKS INC
Proposal award date
Not reported
Contract end date
Not reported
UEI
XFHSJJLN7ZQ7
Solicitation number
Not reported
Topic code
Not reported

Research abstract

A novel nitrogen beam source will provide 5 eV atomic and molecular nitrogen to a 0.5 cm diameter circle with a flux of 10(21)/cm(2)/sec. Larger areas can be irradiated with a lower flux (eg. 10(18)/cm(2)/sec over a 2" diameter wafer). The technique will put minimal gas load into the chamber so it will be compatible with ion pumped MBE systems. The source will be used in an attempt to synthesize crystalline cBN and InGaN thin films. Nitrides in thin film form are potentially commercializable. The sale of the atom source as an add-on to thin film deposition systems is directly commercializable even after Phase I. The source may be particularly appropriate for wide bandgap nitride synthesis.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

65 SBIR/STTR records share this UEI (1986–2021). Reported award amounts total $17,405,049. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Health and Human Services, Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation

Agency intelligence

Department of Defense

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