SBIR/STTR Research Award
High-Temperature Control Circuitry
Award amount
$99,924Program and phase
SBIR · Phase IAward year
2002Award details
- Awarding agency
- Department of Defense
- Branch
- Office of the Secretary of Defense
- Recipient company
- UQM Technologies, Inc.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
"The objective of this Phase I project is to develop high temperature control circuits for use in silicon carbide-based inverters operating at temperatures of 150¿C and higher. The specific objectives of this proposal are to research high temperaturecomponents, develop control circuit designs using available high temperature components, and analyze proposed designs to determine feasibility in inverter gate drive applications. UQM Technologies will research, design, and analyze high temperature controlcircuit designs to determine which has the best potential for application in high temperature, silicon carbide power converters. UQM Technologies is well positioned to develop inverter control circuits with 15 years of experience in designing invertersand brushless PM motors for electric and hybrid electric vehicle applications. A variety of gate drive topologies exist, a few of which will likely prove to be better suited to high temperature operation. High temperature silicon carbide power convertertechnology promises improved power density and a reduction in the size of the inverter and cooling system. The development of high temperature control circuits will enable the implementation of high temperature power converters because the components canbe integrated inside a single package without the need for separating the high temperature from the standard temperature components. For packaging purposes, this integration results in improve
Technology keywords
Not reported