SBIR/STTR Research Award
LOW NOISE INFRARED DETECTOR READOUT ARRAYS FOR 2 KELVIN
Award amount
$49,382Program and phase
SBIR · Phase IAward year
1991Award details
- Awarding agency
- National Aeronautics and Space Administration
- Branch
- Not reported
- Recipient company
- Amber Engineering Inc
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
SPACE BASED, LOW-BACKGROUND INFRARED MEASUREMENTS PRESENT STRINGENT PERFORMANCE REQUIREMENTS ON THE INFRARED DETECTOR ARRAYS AND THEIR ASSOCIATED READOUT MULTIPLEXER CIRCUITRY. VERY-LOW-TEMPERATURE CRYOGENICS ENVIRONMENTS (2 KELVIN) ARE REQUIRED BY THESE SYSTEMS TO ACHIEVE DETECTOR PERFORMANCE LEVELS. THESE CRYOGENICS ENVIRONMENTS POSE TECHNICAL CHALLENGES ON THE READOUT MULTIPLEXER PERFORMANCE. ALTHOUGHSIGNIFICANT PERFORMANCE IMPROVEMENTS HAVE BEEN REALIZED IN LOW-NOISE, LOW-TEMPERATURE READOUT MULTIPLEXERS, SUBSTANTIAL SYSTEMS PENALTIES MUST BE PAID IN THE USE OF ELEVATED TEMPERATURE STAGES TO OPERATE THESE DEVICES. THIS EFFORT WILL DEMONSTRATE THAT LOW-NOISE INFRARED DETECTOR ARRAY READOUT MULTIPLEXERS CAN BE ACHIEVED THROUGH THE USE OF TRW'S ADVANCED CRYOGENIC-COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CRYO-CMOS) FABRICATION PROCESS. SPACE BASED, LOW-BACKGROUND INFRARED MEASUREMENTS PRESENT STRINGENT PERFORMANCE REQUIREMENTS ON THE INFRARED DETECTOR ARRAYS AND THEIR ASSOCIATED READOUT MULTIPLEXER CIRCUITRY. VERY-LOW-TEMPERATURE CRYOGENICS ENVIRONMENTS (2 KELVIN) ARE REQUIRED BY THESE SYSTEMS TO ACHIEVE DETECTOR PERFORMANCE LEVELS. THESE CRYOGENICS ENVIRONMENTS POSE TECHNICAL CHALLENGES ON THE READOUT MULTIPLEXER PERFORMANCE. ALTHOUGHSIGNIFICANT PERFORMANCE IMPROVEMENTS HAVE BEEN REALIZED IN LOW-NOISE, LOW-TEMPERATURE READOUT MULTIPLEXERS, SUBSTANTIAL SYSTEMS PENALTIES MUST BE PAID IN THE USE OF ELEVATED TEMPERATURE STAGES TO OPERATE THESE DEVICES. THIS EFFORT WILL DEMONSTRATE THAT LOW-NOISE INFRARED DETECTOR ARRAY READOUT MULTIPLEXERS CAN BE ACHIEVED THROUGH THE USE OF TRW'S ADVANCED CRYOGENIC-COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CRYO-CMOS) FABRICATION PROCESS.
Technology keywords
Not reported