SBIR/STTR Research Award
Development of Super High Frequency Schottky Barrier Vacuum Transistors
Award amount
$99,836Program and phase
SBIR · Phase IAward year
2002Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- Stellar Micro Devices
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
An extremely high speed transistor is proposed for low-noise high frequency amplifiers using a Schottky barrier with vacuum gap. Low-cost vacuum microelectronic devices have immediate opportunities in the $100 Mn market for cell phone RF devices.haave further opportunities in high-speed and radiation hardened circuits.
Technology keywords
Not reported