CHEMICALLY AMPLIFIED POSITIVE (CAMP) RESISTS FOR WAVEGUIDE APPLICATIONS

WAVEGUIDES ARE USED TO TRANSMIT LIGHT THROUGH OPTICAL PROCESSORS. COMBINING THE RESOLUTION POTENTIAL OF DEEP-UV PHOTOLITHOGRAPHY AND THE EXTREME SENSITIVITY/HIGH CONTRAST OF CHEMICALLY AMPLIFIED POSITIVE ACTING (CAMP) RESISTS OFFERS A POTENTIALLY SIMPLE METHOD FOR FABRICATING HIGHLY RESOLVED, POLYMERIC WAVEGUIDES STRUCTURES. CAMP RESISTS CAN BE MATED WITH OTHER CLADDING MATERIALS WITH LOWER REFRACTIVE INDICES TO PROVIDE THE NECESSARY GRADIENT. THE OBJECTIVES OF THIS PROJECT ARE TO OPTIMIZE CAMP RESISTS FOR WAVEGUIDE APPLICATIONS, TO DIRECTLY FABRICATE STRUCTURE USING DEEP-UV EXPOSURE, AND TO CHARACTERIZE THE STRUCTURE'S PERFORMANCE. CAMP RESISTS (THIN FILM) ARE NOTED FOR OUTSTANDING SENSITIVITY, CONTRAST, AND RESOLUTION; BUT THICK FILM PERFORMANCE IS NOT WELL DOCUMENTED. INVESTIGATORS ARE SYNTHESIZING TWO ACID-SENSITIVE POLYMERS POLY(P-T-BUTOXY-CARBONYLOXYSTYRENE) AND POLY(P-T-BUTOXYCARBONYLOXYSTYRENE-SULFONE)} AND TWO PHOTOACID GENERATORS (2,6-DINITROBENZYL TOSYLATE AND TRIPHENYLSULFONIUM TRIFLATE). THE POLYMERS AND PHOTOACID GENERATORS ARE CHEMICALLY CHARACTERIZED; AND FORMULATED RESISTS TESTED FOR THICK FILM APPLICATION PERFORMANCE, DEEP-UV SENSITIVITY, CONTRAST, RESOLUTION, NEAR INFRARED ABSORPTION, AND REFRACTIVE INDEX. RESIST(S) WILL BE MICROMACHINED INTO WAVEGUIDES AND AT LEAST ONE STRUCTURE CHARACTERIZED (OPTICAL LOSS, SEM, REFRACTIVE INDEX).