NOVEL ALL-DRY ORGANIC LITHOGRAPHIC RESIST

THE FEASIBILITY OF AN ALL-DRY LITHOGRAPHIC SYSTEM BASED ON THE SISLSESQUIOXANES IS EXAMINED. THESE ARE A CLASS OF 3-DIMENSIONAL ORGANOSILICON POLYMERS THAT CAN BE VACUUM DEPOSITED ON SILICON, EXPOSED BY E-BEAMS, X-RAYS, OR UV LIGHT AND DEVELOPED TO A FINE LINE RELIEF IMAGE SIMPLY BY HEATING. THE RESIST PATTERN WITHSTANDS OXYGEN PLASMA OR RIE ETECH CONDITIONS. THE ACHIEVMENT OF A SUITABLE ALL-DRY SYSTEM WILL ELIMINATE MANY SHORTCOMINGS OF SPIN-DEPOSITED RESISTS LEADING TO A SIMPLER SAFER, AND LESS WASTE-G GENERATING PROCESS FOR IC MANUFACTURE. THE PROGRAM OBJECTIVES ARE: 1. TO IDENTIFY SUBSITUTED STRUCTURES OF HIGH SENSITIVITY AND DETERMINE THEIR LITHOGRAPHIC PROPETIES.THE COMPOUNDS WILL BE PREPARED FOR HYDROLOSIS OF ORGANOTRIHALOSILANES (OR CO-HYDROLYSIS OF MIXTURES OF ORGANOTRIHALOSILANES), SUBSEQUENT DEHYDRATION, AND ISOLATIONOF THE SILSESQUIOXANE POLYMER BY SUBLIMATION OR CRYSTALLIZATION. 2. TO DETERMINE VACUUM DEPOSITION PARAMETERS. THE IMPLICATIONS OF THIS RESEARCH ARE FAR REACHING IN SIMPLIFYING RESIST COATING AND WAFER HANDLING TECHNIQUES AS DIMENSIONS BECOME SMALLER AND WAFER FORMATS BECOME LARGER.