SBIR/STTR Research Award
High Power Frequency Doubled Laser Diode Devices
Award amount
$56,815Program and phase
SBIR · Phase IAward year
1997Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- Altos, Inc.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
This Small Business Innovation Research Phase I program will determine the practicality of increasing the second harmonic (SH) output of frequency doubling devices by at least 5 times current gutput powers. Altos has demonstrated in preliminary experiments have a 2 times to 3 times increase in SH output by creating thermal gradients across the waveguide structures used to frequency double the laser diodes. These preliminary results have been reproduced at different operating wavelengths and with different quality KTP waveguides. Altos will draw from its existing inventory of KTP waveguides to provide suitable samples for work under this program. Increasing the output power of frequency doubled laser diode devices to more than 10 mW will open up a broad range of applications, such as in data storage, medical diagnostics, and biological/chemical sensing. Although the blue/violet wavelengths of these devices are highly sought, the currently low power ranges limit the application potential.
Technology keywords
Not reported