SBIR/STTR Research Award

High Power Frequency Doubled Laser Diode Devices

Award identifier c080dc1d20cfc3130fe93e02c9c92112c99d2dd73331096ae3e4083af7ed82f5Awarding agency Department of Defense · Missile Defense Agency

Award amount

$56,815

Program and phase

SBIR · Phase I

Award year

1997

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Altos, Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

This Small Business Innovation Research Phase I program will determine the practicality of increasing the second harmonic (SH) output of frequency doubling devices by at least 5 times current gutput powers. Altos has demonstrated in preliminary experiments have a 2 times to 3 times increase in SH output by creating thermal gradients across the waveguide structures used to frequency double the laser diodes. These preliminary results have been reproduced at different operating wavelengths and with different quality KTP waveguides. Altos will draw from its existing inventory of KTP waveguides to provide suitable samples for work under this program. Increasing the output power of frequency doubled laser diode devices to more than 10 mW will open up a broad range of applications, such as in data storage, medical diagnostics, and biological/chemical sensing. Although the blue/violet wavelengths of these devices are highly sought, the currently low power ranges limit the application potential.

Technology keywords

Not reported

Agency intelligence

Department of Defense

Back to SBIR/STTR Research Awards

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