Plasma Deposited Environmentally Friendly, Dry Photo Resist Process for Closed System Integrated Circuit Manufacture

Recently, studies of organosilicon hybride network materials containing reactive R-Si-H moieties have found that such high silicon composition exhibit superior photosensitivity and function as single layer photo-definable glass etch masks. We propose a unique, low cost approach to dry plasma polymerize materials with similar properties and the demonstration of their use for an entirely dry photolithographic processing for sub-micron level geometries on large, irregular, or complex substrates. This new class of plasma deposited organosilicon resists will be highly photosensitive organosilican hydride network materials which may be photo-oxidatively patterned and processed without removal from a vacuum processing environment. Image development is accomplished by chlorine based RIE, leaving a robust, negative tone Si02-like etch mask that allows pattern transfer to underlying materials ina single RIE sequence.