A GaN-A1GaN CCD for UV Imaging Applications

We propose a unique GaN-Al(sub x)Ga(sub 1-x)N heterojunction based CCD for imaging in the ultraviolet (wavelengths less than 365 nm). Our proposed device will be solid state, TTL compatible and in it's final configuration solar blind. The Phase I program is aimed at establishing the technical feasibility of our device concept. Our proposed CCD is in essence a GaN-AlGaN gated photoconductor with a multiple gate structure to demonstrate charge trapping and charge motion capabilities. We have also proposed to demonstrate the imaging capabilities of such a structure via a simple bright and dark field grid pattern. This will put us in an excellent position to fabricate a linear or matrix array type CCD imaging device in Phase II and integrate it with readout electronics.