Near Real-Time Monitoring of Thin-Film Materials and Their Interfaces Using Evanescent Microwave Probes

We propose a phase I feasibility investigation of the merits of a new microwave-based method for near real-time monitoring of thin-film material growth and etching with high spatial resolutions. The method we propose to develop here is based on monitoring the microwave resistivity of the film and the material during its processing (growth or etching) using a spatially confined microwave probe. Material quality, structure, stoichiometry, and impurity content all affect its microwave resistivity and can be detected the probe. Our main objective in this study is to design and develop a prototype probe that can be used in actual deposition chambers to monitor film growth in-situ and in real-time. Such a probe will be invaluable in providing a feedback on the growth conditions to control of the process. Our preliminary studies indicate that the evanescent microwave probe is capable of performing such a task. Furthermore, we will investigate possibility of using multi-frequency probes as a method to investigate hierarchy of properties encountered in multi-layered structures. Depth variation as well as information regarding the gradient of properties will be obtained and monitored to control the deposition process. The proposed work will be performed over a period of 9 months at MICC.