Development of ZnO spin Field Effect Transistor (FET)

The goal of this effort is to grow transition metal doped ZnO on native substrates, characterize the films, and design a prototype spin FET based on ZnO. The main objective of phase I will be to demonstrate the growth of high quality homoepitaxial thisfilms of transition metal doped ZnO on ZNO using Cermet's MOCVD technology and in-house fabricated substrates. The quality of the films will be analyzed by X-ray, PL and DLTS. Electrical and magnetic properties will be investigated. Successfulcompletion of Phase I will yield room temperature spintronic material based ZnO for electronic and optical applications. This proposed work provides basis for a spin FET with more efficient operation. Spin FET needs less power than a conventional FET andits efficiency is higher than the conventional FET. Defense systems, automotive, commercial aviation and commercial communications industries will benefit from this technology