PROCESSING FOR BURIED METALLIZATION IN DIAMOND FILM

Due to the lack of techniques for buried metallization in PD or multilayer metallized PD, diamond has not been used as a material for electronic packaging. The primary obstacle in buried metallization in PD or producing multilayer metallized PD is the difficulty in generating good bonding between PD and selected metals, especially copper. It is proposed to develop the requisite technology using a combination of state-of-the-art methods for CVD diamond growth and ion processing. The enabling technology to be demonstrated in the Phase I research is the ability to create good adhesion between metal layers and PD, and the ability to nucleate and grow diamond over metallized PD. Well-bonded metal layers on the PD surface will be achieved using a combination of a substrate-biased diamond deposition technique, ion enhanced deposition, and multilayer metals including carbide formers. Deposition of diamond on metallized PD will be achieved by using similar combinations.