Semiconductor-Insulator-Semiconductor (SIS) Power Device for High Temperature, Speed and Power Application

This proposal is for the development of an optically activated high voltage semiconductor switch device capable of switching loads on and off within nanoseconds or picoseconds. A device of this type would not be possible using the existing limitations imposed by the limited knowledge on the transport of both electrons and holes across a Metal-Insulator-Semiconductor (MIS), and Semiconductor-Insulator-Semiconductor (SIS) interface. In order to provide this type of a device, a uniform bilateral flow of electrons and holes must take place through the interface. To properly characterize this phenomena so that an optically activated gapped semiconductor device os this type can be developed, a Scanning Tunneling Microscope (STM) will be used to establish the ballistic electron and hole transport mechanisms in insulator and semiconductor interfaces. This characterization data will make it possible to develop a new design for high power switching devices. The development of a high voltage power semiconductor device with rapid response time capable of being optically switched within nanoseconds or picoseconds can then be accomplished using simultaneous tunneling of both holes and elctrons through the Semiconductor-Insulator-Semiconductor (SIS) interface. Two injecting semiconductor junctions (pn-, gap, p-n) based in Si, GaAs or Si C materials with ohmic contacts at both ends will be separated by a gap or oxide interface where tunneling of both electrons and holes can be enhanced (controlled?) by photon injection into the interface.