SBIR/STTR Research Award

PSEUDOMORPHIC HEMTS FOR MILLIMETER WAVE COMMUNICATIONS

Award identifier f93b46a5ce07810c73dc2b031b608906a646f10434e3ba8ea68c8c7c6845ccceAwarding agency National Aeronautics and Space Administration

Award amount

$486,412

Program and phase

SBIR · Phase II

Award year

1992

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
Spire Corporation
Proposal award date
Not reported
Contract end date
Not reported
UEI
RG46KJGARZF4
Solicitation number
Not reported
Topic code
Not reported

Research abstract

ADVANCES IN SCIENTIFIC INSTRUMENTATION USED IN DEEP-SPACE MISSIONS HAVE GENERATED A NEED FOR HIGH DATA-TRANSMISSION RATES TO EARTH. IT MAY BE ECONOMICALLY FEASIBLE TO USE THE KA BAND (27-40 GHZ) FOR UP- AND DOWN-LINKING; THUS DEVELOPMENT OF MONOLITHIC MICROWAVE INTEGRATED-CIRCUIT PHASED ARRAY DISTRIBUTION SYSTEMS FOR MILLIMETER WAVELENGTHS IS DEMANDED. THE PSEUDOMORPHIC, HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) IS UNEQUIVOCALLY THE BEST CANDIDATE FOR HIGH-POWER, HIGH-EFFICIENCY APPLICATIONS FROM 10-100 GHZ. ITS SUPERIOR LOW-NOISE PERFORMANCE PROVIDES THE OPPORTUNITY FOR INTEGRATION OF BOTH HIGH-POWER AND LOW-NOISE DEVICES ON THE SAME CHIP WITHOUT COMPROMISING THE PERFORMANCE OF EITHER COMPONENT. THE INNOVATION EXPLORED IN THIS PROJECT IS AN INVERTED, DOUBLE, HETEROJUNCTION HEMT WITH PULSE-DOPED DONOR AND PSEUDOMORPHIC CHANNEL LAYERS TO BE GROWN BY MOCVD, THE DEPOSITION TECHNIQUE OF CHOICE FOR HIGH-QUALITY PRODUCTION CAPABILITY. THE PHASE I PROJECT WILL DEMONSTRATE FEASIBILITY OF CONCEPT; PHASE II WILL RESULT IN AN OPTIMIZED STRUCTURE SUITABLE FOR PRODUCTION. ADVANCES IN SCIENTIFIC INSTRUMENTATION USED IN DEEP-SPACE MISSIONS HAVE GENERATED A NEED FOR HIGH DATA-TRANSMISSION RATES TO EARTH. IT MAY BE ECONOMICALLY FEASIBLE TO USE THE KA BAND (27-40 GHZ) FOR UP- AND DOWN-LINKING; THUS DEVELOPMENT OF MONOLITHIC MICROWAVE INTEGRATED-CIRCUIT PHASED ARRAY DISTRIBUTION SYSTEMS FOR MILLIMETER WAVELENGTHS IS DEMANDED. THE PSEUDOMORPHIC, HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) IS UNEQUIVOCALLY THE BEST CANDIDATE FOR HIGH-POWER, HIGH-EFFICIENCY APPLICATIONS FROM 10-100 GHZ. ITS SUPERIOR LOW-NOISE PERFORMANCE PROVIDES THE OPPORTUNITY FOR INTEGRATION OF BOTH HIGH-POWER AND LOW-NOISE DEVICES ON THE SAME CHIP WITHOUT COMPROMISING THE PERFORMANCE OF EITHER COMPONENT. THE INNOVATION EXPLORED IN THIS PROJECT IS AN INVERTED, DOUBLE, HETEROJUNCTION HEMT WITH PULSE-DOPED DONOR AND PSEUDOMORPHIC CHANNEL LAYERS TO BE GROWN BY MOCVD, THE DEPOSITION TECHNIQUE OF CHOICE FOR HIGH-QUALITY PRODUCTION CAPABILITY. THE PHASE I PROJECT WILL DEMONSTRATE FEASIBILITY OF CONCEPT; PHASE II WILL RESULT IN AN OPTIMIZED STRUCTURE SUITABLE FOR PRODUCTION.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

429 SBIR/STTR records share this UEI (1983–2014). Reported award amounts total $73,907,551. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, National Science Foundation, Department of Energy, Department of Health and Human Services, Department of Commerce

Agency intelligence

National Aeronautics and Space Administration

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