SBIR/STTR Research Award
Free-standing AlGaN wafers
Award amount
$69,967Program and phase
SBIR · Phase IAward year
2003Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- TECHNOLOGIES & DEVICES INTERNATIONAL,
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
TDI proposes to develop fabrication technology for UV transparent electricallyconducting substrate materials. Recently TDI has demonstrated free-standing GaNand AlN wafers using HVPE approach. In this project we plan top develop growthtechnology for low defect AlGaN free-standing wafers. The main goal of the PhaseI research is to prove the concept and demonstrate free-standing AlGaN wafer withAlN concentration from 40 to 60 mol.%. Phase II work will be focused on thedevelopment of production technology of 2 inch free-standing AlGaN wafers. Development of UV transparent substrate materials lattice matched to UV emitters andsensors will benefit development and commercialization of AlGaN-based devices andcomponents operating in UV region.
Technology keywords
Not reported