Pseudo-homoepitaxial Growth Of Single Cell Diamond Films

HETEROEPITAXY OF SINGLE CRYSTAL DIAMOND FILMS AT LOW PRESSURE BY ENERGY ASSISTED CHEMICAL VAPOR DEPOSITION FOR ELECTRONIC DEVICE APPLICATIONS IS A GOAL THAT REMAINS UNREALIZED AFTER MORE THAN A DECADE OF EFFORTS WORLD WIDE. A FUNDAMENTAL PROBLEM IS THE LACK OF CONTROL ON NUCLEATION IN THE HETEROEPITAXY PROCESS. RECENTLY, OUR ORGANIZATION HAS SUCCESSFULLY DEMONSTRATED FOR THE PREPARATION OF SINGLE CRYSTAL DIAMOND SUBSTRATES BY A REGENERATIVE EPITAXIAL GROWTH (REG) PROCESS. THE EXPLORATION OF AN ALTERNATIVE TECHNIQUE, THE PSEUDO-HOMOEPITAXY GROWTH (PHG) PROCESS. THAT MAY BE SIMPLER TO IMPLEMENT IS PROPOSED. THE PHASE I OBJECTIVE IS TO EXPERIMENTALLY EVALUATE THE FEASIBILITY OF THE CRITICAL STEPS IN THE PROCESS. SUCCESSFUL OUTCOME WILL LEAD TO AVAILABILITY OF DIAMOND SUBSTRATES FOR THE DEVELOPMENT OF DIAMOND BASED ELECTRONICS.