DOPED DIAMOND QUANTUM WELLS FOR FIELD EFFECT TRANSISTORS

IN ORDER TO BET USE NEW GENERATION CVD DIAMOND FILMS FOR ADVANCED ELECTRONIC APPLICATIONS, WE PROPOSE EXTENDING THE PRESENT TECHNOLOGY FOR THE PURPOSE OF GROWING SINGLE CRYSTAL DIAMOND DOPING SUPERLATTICES. DIAMOND TRANSISTORS OFFER THE POSIBILITY OF HIGH SPEED AND HIGH DENSITY CIRCUITS WHICH ARE OF PARTICULAR IMPORTANCE FOR FUTURE GENERATION SUPERCOMPUTERS. DIAMOND DEVICES NOT ONLY HAVE HIGH THERMAL CONDUCTIVITY BUT CAN FUNCTION AT HIGHER TEMPERATURES SO CONSEQUENTLY CAN SIMPLIFY SUPERCOMPUTER DESIGN WITH RESPECT TO COOLING CONSIDERATIONS. THE PROPOSED RESEARCH PROGRAM IS DIRECTED TOWARDS GROWTH OF DIAMOND DOPING SUPERLATTICES. ONE OF THE MAJOR LIMITATIONS OF PRESENT DIAMOND TECHNOLOGY IS THE LACK OF SHALLOW DOPANT SPECIES, ESPECIALLY NOTABLE WHEN CONSIDERING TRANSISTOR DESIGNS FOR ROOM TEMPERATURE. WE PROPOSE HERE THE FABRICATION OF BORON DOPING SUPERLATTICES IN SUCH A MANNER AS MIMIC SHALLOW DOPANT BEHAVIOUR. THE PROPOSED SUPERLATTICE WILL BE USED TO EFFECTIVELY LOWER DOPANT ACTIVATIN ENERGY SUFFICIENTLY TO ALLOW FOR ROOM TEMPERATURE TRANSISTOR OPERATION.