SBIR/STTR Research Award

Non-volatile Semiconductor Memories

Award identifier ecb5c1b568c9df969f7cf5c26b2a641ba449ebeb8687d7e1a686c4c087c04df5Awarding agency Department of Defense · Missile Defense Agency

Award amount

$54,896

Program and phase

SBIR · Phase I

Award year

1993

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Summit Device Technology
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

NON-VOLATILE SEMICONDUCTOR MEMORIES FOR RADIATION ENVIRONMENTS CAN BENEFIT FROM ADVANCED ELECTRONIC MATERIALS. WE PROPOSE TO INVESTIGATE SOME NOVEL MATERIALS FOR APPLICATION TO NON-VOLATILE SEMICONDUCTOR MEMORIES WHICH COULD IMPROVE PERFORMANCE IN RADIATION ENVIRONMENTS. IN PHASE I, WE WILL ATTEMPT TO DEVELOP TWO METHODS OF DEPOSITING THIN FILMS OF THESE NOVEL MATERIALS, CHARACTERIZE THE DEPOSITED FILMS, OPTIMIZE THE DEPOSITION METHODS, FABRICATE CAPACITORS FROM THE THIN FILMS, AND DO PRELIMINARY CHARACTERIZATION OF THE CAPACITORS. DETAILED CHARACTERIZATION OF CAPACITORS OF THESE MATERIALS WOULD BE PERFORMED IN PHASE II.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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