Nitride Semiconductor Substrates: Application of Bulk AlN Substrates for High Power Microwave Devices

We will prepare aluminum nitride substrates, from 20 to 50 mm in diameter, for epitaxial growth of Al_xGa_{1-x}N device structures. These device structures will then be compared with the properties of similar devices prepared on alternative substrates.In addition, unique device structures that take advantage of the unique opportunities of AlN will also be designed and tested. The primary focus will be on high power rf devices for AMRFS.BENEFITS: Extremely high power microwave and millimeter wavedevices will have extensiveapplications in both the DoD (such as AMRFS) and in civilian applications (such aswireless). The use of aluminum nitride (AlN) substrates will accelerate thisdevelopment. In addition, AlN substrates may be extremely valuable for uses in hightemperature electronics for propulsion applications, for space electronics whereradiation hardening is imperative, and for uv solid state emitters and detectors formissile defense, optical communications and data storage. Because of theanticipated benefits for improved nitride epitaxy on AlN substrates, there is greatcommercialization potential for their use blue/uv laser diode fabrication for use indata storage (such as high density DVD) by reducing the manufacturing costs overcompeting substrates.