METALORGANIC CHEMICAL VAPOR DEPOSITION OF SUPERCONDUCTIVE THIN FILMS BY ELECTRON CYCLOTRON RESONANCE PLASMA ENHANCED CHEMICAL

ELECTRON CYCLOTRON RESONANCE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (ECR-PECVD) TECHNIQUE CAN DEPOSIT UNIFORMLY YTTRIUM-BARIUM-COPPER TYPE HIGH TEMPERATURE SUPERCONDUCTING THIN FILM OVER A LARGE AREA ABOUT 6 INCHES IN DIAMETER. TO MAINTAIN THE SUPERCONDUCTIVITY ON THE SURFACE AND THE BULK OF THE THIN FILM, HIGH OXYGEN CONTENT MUST BE RETAINED ON THE FILM. ECR TECHNIQUE CAN SUSTAIN AN OXYGEN RICH ENVIRONMENT. FURTHER, AS THE ELECTRON TEMPERATURE RANGES FROM 7 TO 15 EV IN THE ECR SOURCE, IT PROVIDES AN ENVIRONMENT FOR THE CHEMICAL REACTION BETWEEN Y, BA, AND CU METAL CHELATES AND OXYGEN ATOMS FORMING HIGH TEMPERATURE SUPERCONDUCTING MATERIALS IN THE PLASMA. MICROSCIENCE WILL CREATE PLASMA IN THE ECR SOURCE, AND EXTRACT PLASMA TO THE PROCESS CHAMBER BY A DIVERGENT MAGNETIC FIELD. THIS STREAM OF UNIFORM PLASMA CONTAINING SUPERCONDUCTIVE PRECURSORS WILL BOMBARD THE HEATED SURFACE OF THE SUBSTRATE, SAY YSZ(100), FORMING A THIN FILM. THE AS-DEPOSITED THIN FILM WILL BE INVESTIGATED WHETHER HIGH TEMPERATURE SUPERCONDUCTIVE THIN FILM IS FORMED. THIS DEPOSITION PROCESS CAN BE APPLIED TO FABRICATED THIN FILM LAYERS ON WATER.