SBIR/STTR Research Award
40 WATT POWER AMPLIFIER
Award amount
$202,000Program and phase
SBIR · Phase IIAward year
1990Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- Hittite Microwave Corporation
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
A NEW POWER FET CONFIGURATION DEMONSTRATED AT HITTITE MICROWAVE CORPORATION EMPLOYES THE CAPABILITIES OF THE GAAS MONOLITHIC INTEGRATED CIRCUITS TECHNOLOGY TO SOLVE THE IMPEDANCE MATCHING AND STABILITY PROBLEMS WHICH LIMIT THE MAXIMUM USABLE PERIPHERY FOR HIGH POWER SOLID STATE POWER AMPLIFIER APPLICATIONS. IF THIS TECHNOLOGY IS DEVELOPED AND APPLIED TO THE IMPLEMENTATION OF C-BAND HIGH POWER AMPLIFIERS, THE POTENTIAL EXISTS FOR REALIZING EFFICIENT AND WELL BEHAVED 40 WATT AMPLIFIERS IN SMALL PHYSICAL VOLUME AND AT AFFORDABLE COST. THIS PROPOSAL CONTAINS THE BACKGROUND INFORMATION AND THE DESCRIPTION OF OUR TECHNICAL APPROACH FOR SUCH A DESIGN EFFORT TO DEMONSTRATE THE FEASIBILITY.
Technology keywords
Not reported