SBIR/STTR Research Award
IN-SITU GROWTH OF INDIUM ARSENIDE ANTIMONIDE LONGWAVELENGTH PHOTODIODES
Award amount
$252,228Program and phase
SBIR · Phase IIAward year
1992Award details
- Awarding agency
- National Science Foundation
- Branch
- Not reported
- Recipient company
- Electro-optek Corp
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
THE RECENT ADVANCES IN BANDGAP ENGINEERING BY MOLECULAR BEAM EPITAXY (MBE) HAVE PRODUCED A STRAINED SUPERLATTICE (SSL) OF INSB/INA -XSBX CAPABLE OF BEING MADE INTO PHOTODIODE DETECTORS SUITABLE FOR THE LONG WAVELENGTH INFRARED (LWIR, 8-14 MICRON) SPECTRAL RANGE. THIS PROPOSAL IS MADE TO DEVELOP THE PHOTODIODES DURING EPITAXY OF THE SSLON BUFFERED SILICON (SI). THE EFFORT WILL DEVELOP A SUITABLE MULTILAYERED BUFFER FOR NEAR-PERFECT LATTICE MATCHING BETWEEN THE SI AND SSL, GROW THE SSL TAILORED FOR LWIR AND FORM THE PHOTODIODES IN-SITU. SPECIAL EFFUSION SOURCES, EPITAXIAL PROCESSES AND TRIAL EPITAXY WILL BE DESIGNED, DELINEATED AND MADE, RESPECTIVELY, IN PHASE I FOR THE PHOTODIODE DEVELOPMENT.
Technology keywords
Not reported