SBIR/STTR Research Award

IN-SITU GROWTH OF INDIUM ARSENIDE ANTIMONIDE LONGWAVELENGTH PHOTODIODES

Award identifier f7dc67fb5f802b4ad64f196e0ed4664a4d300d2b99a1910496b670ba644feb12Awarding agency National Science Foundation

Award amount

$252,228

Program and phase

SBIR · Phase II

Award year

1992

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
Electro-optek Corp
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

THE RECENT ADVANCES IN BANDGAP ENGINEERING BY MOLECULAR BEAM EPITAXY (MBE) HAVE PRODUCED A STRAINED SUPERLATTICE (SSL) OF INSB/INA -XSBX CAPABLE OF BEING MADE INTO PHOTODIODE DETECTORS SUITABLE FOR THE LONG WAVELENGTH INFRARED (LWIR, 8-14 MICRON) SPECTRAL RANGE. THIS PROPOSAL IS MADE TO DEVELOP THE PHOTODIODES DURING EPITAXY OF THE SSLON BUFFERED SILICON (SI). THE EFFORT WILL DEVELOP A SUITABLE MULTILAYERED BUFFER FOR NEAR-PERFECT LATTICE MATCHING BETWEEN THE SI AND SSL, GROW THE SSL TAILORED FOR LWIR AND FORM THE PHOTODIODES IN-SITU. SPECIAL EFFUSION SOURCES, EPITAXIAL PROCESSES AND TRIAL EPITAXY WILL BE DESIGNED, DELINEATED AND MADE, RESPECTIVELY, IN PHASE I FOR THE PHOTODIODE DEVELOPMENT.

Technology keywords

Not reported

Agency intelligence

National Science Foundation

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