ONCOLYTIC HERPES SIMPLEX VIRUS TYPE 1 FOR TUMOR THERAPY

Not Available In response to the Office of Scientific Development SBIR topic OSD099-03, Sterling Semiconductor proposes a 6-month, $l00K Phase I effort to improve the breakdown field of large-area silicon carbide (SiC) devices. Lateral vapor-phase epitaxial growth (L-VPE) of SiC will be used to grow over substrate defects such as micropipes and elementary crew dislocations and remove them from the active device area. This will increase the breakdown voltage of large devices relative to those fabricated without this L-VPE layer. Devices with and without this L-VPE layer will be fabricated and their performance as a function of area will be determined. The proposed program will accelerate the insertion of SiC devices into DoD, utility, automotive, and industrial power applications. BENEFITS: Viable large-area (> 1 sq. cm) SiC devices will result from the proposed work if successful. Increased efficiency and reduced size of components will mean savings to end users (both DoD and commercial). The market insertion of SiC devices is potentially > $1 billion/yr.