SBIR/STTR Research Award

UV LEDs for Solid State Lighting

Award identifier 78b5a39b773919cdff4f5fb993a6f7a7271fecddb5e9687cd21a86eef93b5b54Awarding agency Department of Energy

Award amount

$99,694

Program and phase

SBIR · Phase I

Award year

2003

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
CERMET, INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

72979S03-I This project will develop technology to enable the commercial production of high-quality (In,Al,Ga)N epitaxial materials and high-performance UV LEDs for solid state lighting applications on AlN substrates. This will be accomplished by developing a production-quality bulk AlN wafer, developing high quality, p- and n-type doped AlGaN and InAlGaN-based multi-quantum wells, and introducing novel device structures including large area flip chip LED and amplified LEDs. Phase I will focus on the development of high quality, bulk AlN crystals to eliminate dislocations in the high-aluminum-content active layers. High n-type and p-type doping levels will be developed for an AlxGa1-xN composition, with x up to 0.6. Commercial Applications and Other Benefits as described by awardee: Long life, high power UV LEDs manufactured on native substrates should enable cost competitive, solid state light sources. This technology should save substantial energy in general lighting, automotive lighting, and aviation. It also would reduce particle emissions and greenhouse gases from power generation and reduce the U.S. dependency on foreign oil supplies.

Technology keywords

Not reported

Agency intelligence

Department of Energy

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