Multicolor Electrochromic Camouflage

Recently there is much interest in the development of near room temperature, shortwave infrared imaging cameras using semiconductor focal plane array technology. One of the prime material candidates is HgCdTe. The advantage of HgCdTe over InGaAs isHgCdTe's high performance in the wavelength range of 1.7-2.5 microns. Before such cameras are mass produced for the Army's applications, a number of issues need to be addressed. One of the issues is to produce focal plane arrays and readout circuits withmuch lower noise, and the other is to to produce arrays with larger format and smaller pixel size. In Phase II, we will address these two issues by producing low noise, 640x516 HgCdTe cameras and by developing 1280x1024 hybrid array miniaturizationtechnology. Once these goals are accomplished, producing InGaAs camera with a wavelength of 1.7 micron is straightforward.