SBIR Phase II: Novel Deposition of Silicon Carbide Boules

This Small Business Innovation Research (SBIR) Phase II project will develop a novel processing technique to form silicon carbide (SiC) boules for wafer production. The technique uses high-purity gas precursors and has the potential to economically produce large diameter SiC boules with low contamination levels and reduced defect levels. In this project, SiC boule growth using gas-phase precursors will be developed for commercialization of 150 mm SiC wafers. SiC is a wide bandgap compound semiconductor with high thermal conductivity, high breakdown electric field strength, thermal stability and chemical inertness. SiC-based electronics are of great interest because they can significantly outperform conventional semiconductors under high-temperature, high-power, high-radiation, and corrosive conditions. Potential products based on SiC include engine control eletronics, turbine engine sensors, power switching devices, microwave electronics, and many others.