PARALLEL 3-D MAGNETIC RESONANT ADDRESS MEMORY

PARALLEL PROCESSOR SYSTEMS ARE ACCLAIMED FOR SUPERCOMPUTING. ALL PARALLEL SYSTEMS REQUIRE TRUE PARALLEL ACCESS MEMORIES (NO INTERLEAVING) FOR EFFICIENT PARALLELISM. MRAM HAS INVENTED THE FIRST TRUE PARALLEL MEMORY. AS A RESULT OF THIS BREAKTHROUGH IN COST/PERFORMANCE, PARALLEL SYSTEMS CAN NOW SPAN THE FULL MARKET RANGE, FROM LARGE SUPERCOMPUTERS TO PCS. THIS PARALLEL RAM USES ELECTROMAGNETIC RF WAVES THAT ARE TRANSMITTED TO/FROM THE MEDIA (MEMORY MATERIAL). DATA BITS ARE WRITTEN AND READ BY FREQUENCY TUNING, THUS PARALLEL ACCESS IS ACHIEVED AS A RESULT OF THE PARALLEL NATURE OF ELECTROMAGNETIC RADIATION. THE MEMORY USES THE PRINCIPLE OF NUCLEAR MAGNETIC RESONANCE (NMR). A FORTUNATE DISCOVERY OF A UNIQUE MATERIAL WAS CRITICAL TO THE DEVELOPMENT OF THIS MEMORY. THE MATERIAL IS INEXPENSIVE, AND STORES A MEGABIT OF DATA PER CUBIC CENTIMETER. THE MEMORY READS AT THE RATE OF 20 MEGABITS PER SECOND, AND WRITES AT 4 MEGABITS PER SECOND, WITH AN ACCESS TIME OF 50 AND 250 NANOSECONDS RESPECTIVELY.