SBIR/STTR Research Award

Novel Technology for Electronic Multilayer Devices

Award identifier 022402bfeb6aae081298baf5b9ea877a108757a37a428c223b3a7119fe2c1710Awarding agency Department of Defense · Missile Defense Agency

Award amount

$99,000

Program and phase

SBIR · Phase I

Award year

1996

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Sumi Tech, Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

A novel technological approach was recently devised by Sumi Tech engineers to fabricate multilayer electronic components, which enables the manufacture of devices with very high volumetric efficiency and reliability. Inexpensive electrode materials such as copper, or aluminum are potential candidates, since the process takes place at relatively low ambient temperature (e.g., less than 400 C), thus avoiding the need of traditional co-firing step at high temperature (e.g., 1200 C or higher). Minimal electrode and dielectric interaction is also expected, with the subsequent low leakage and high insulation resistance. The use of a high performance substrate material greatly enhances the reliability of these devices. Use of a wide selection of traditional and newly developed dielectrics ensure higher performance, at high temperatures and frequencies. These aspects of the process coupled with microfabrication techniques, ensure a high volumetric efficiency for these devices. This technology addresses the entire spectrum of multilayer ceramic capacitors and beyond, since other passive components fall under its manufacturing potential. The technology is readily incorporated by present solid state device fabrication processes. It will not require a large capital investment since today s fabs already have most of the required instrumentation on the line.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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