SBIR/STTR Research Award
Method fro advanced production techniques for in-line deposition
Award amount
$591,823Program and phase
SBIR · Phase IIAward year
1995Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- SI Diamond Technology Inc
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
WE PROPOSE AN INNOVATIVE APPROACH WHICH LEADS TO THICK TUNGSTEN WIRES FULLY EMBEDDED IN SOLID DIAMOND SLAB. IN THIS APPROACH, THIN FILMS OF CHEMICAL VAPOR DOPOSITION (CVD) DIAMOND ARE COATED WITH A REFRACTORY METAL AND THE METAL IS PATTERNED. THESE PATTERNED LAYERS FILMS ARE STACKED AND PROPERLY ALIGNED, AFTER WHICH THEY ARE JOINED TOGETHER BY PLACING THE STACK IN A DIAMOND CVD CHAMBER. THE INTERLAYER VIAS ARE MADE BY EITHER LASER DRILLING OR BY REACTIVE ION ETCHING AND THE VIAS ARE FILED BY TUNGSTEN CVD. THE TOP METAL LAYER CAN BE PATTERNED TO CREATE THE COMPLETE INTERCONNECT BOARD. THE OBJECTIVE OF THE PHASE I PROJECT IS TO EXAMINE THE FEASIBILITY OF THIS CONCEPT BY BUILDING A TWO LAYER STACK OF DIAMOND-METAL INTERCONNECTS. WE WILL DEMONSTRATE A COMPLETE VERY HIGH THERMAL PERFORMANCE DIAMOND-METAL MULTI-LAYER INTERCONNECT TECHNOLOGY AND DO ELECTRICAL AND THERMAL PERFORMANCE TESTS IN THE PHASE II OF THIS PROJECT.
Technology keywords
Not reported