SBIR/STTR Research Award

Method fro advanced production techniques for in-line deposition

Award identifier 47076c2d75bc23c6b128d4c8f1c1b2458d7b6c9245633728055b1b01ab4cd04cAwarding agency Department of Defense · Missile Defense Agency

Award amount

$591,823

Program and phase

SBIR · Phase II

Award year

1995

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
SI Diamond Technology Inc
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

WE PROPOSE AN INNOVATIVE APPROACH WHICH LEADS TO THICK TUNGSTEN WIRES FULLY EMBEDDED IN SOLID DIAMOND SLAB. IN THIS APPROACH, THIN FILMS OF CHEMICAL VAPOR DOPOSITION (CVD) DIAMOND ARE COATED WITH A REFRACTORY METAL AND THE METAL IS PATTERNED. THESE PATTERNED LAYERS FILMS ARE STACKED AND PROPERLY ALIGNED, AFTER WHICH THEY ARE JOINED TOGETHER BY PLACING THE STACK IN A DIAMOND CVD CHAMBER. THE INTERLAYER VIAS ARE MADE BY EITHER LASER DRILLING OR BY REACTIVE ION ETCHING AND THE VIAS ARE FILED BY TUNGSTEN CVD. THE TOP METAL LAYER CAN BE PATTERNED TO CREATE THE COMPLETE INTERCONNECT BOARD. THE OBJECTIVE OF THE PHASE I PROJECT IS TO EXAMINE THE FEASIBILITY OF THIS CONCEPT BY BUILDING A TWO LAYER STACK OF DIAMOND-METAL INTERCONNECTS. WE WILL DEMONSTRATE A COMPLETE VERY HIGH THERMAL PERFORMANCE DIAMOND-METAL MULTI-LAYER INTERCONNECT TECHNOLOGY AND DO ELECTRICAL AND THERMAL PERFORMANCE TESTS IN THE PHASE II OF THIS PROJECT.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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