LARGE SIZE (>1CM) INGAAS PHOTODETECTORS FOR 1.3 TO 2.1 UM

WE PROPOSE TO DEVELOP A LARGE-SIZE (>1CM DIAMETER) INDIUM GALLIUM ARSENIDE PHOTODETECTOR WITH HIGH QUANTUM EFFICIENCY (>70%) OUT TO 2.1UM FOR FIBER OPTICS, EYESAFE RANGEFINDING, LIDAR AND LASER SEEKING. THESE DEVICES WILL HAVE LOW DARK CURRENTS FOR HIGH 300 DEG K SENSITIVITY (D* (12)CM (HZ)(1/2/W) AND HAVE SPECIAL DEVICE STRUCTURES FOR RISE/FALL TIMES NEAR 10 NANOSECONDS. EPITAXX IS UNIQUELY QUALIFIED TO PERFORM THIS PROGRAMM AS WE CURRENTLY SELL 3MM DIAMETER INGAAS DETECTORS AND HAVE MADE 5MM PROTOTYPES. THE PHASE I EFFORT WILL STUDY THE EFFECT OF INP SUBSTRATE DEFECTS UPON DEVICE PERFORMANCE. CONVENTIONAL EPITAXX INP/IN53GA47AS STRUCTURES FOR 1.0-1.7UM WILL BE FABRICATED INTO UNPRECEDENTED SIZES OF 5, 7, AND 10MM DIAMETER - ALL ON A SINGLE 2" INP SUBSTRATE - AND TESTED FOR SENSITIVITY AND SPEED. ONE PROTOTYPE 10MM DEVICE WITH A 20NSEC. RISETIME GOAL WILL BE DELIVERED. THE PHASE II EFFORT WILL INCLUDE: I) VAPOR PHASE GROWTH OF IN(X)GA(1-X)AS (.53<X<.70) AND INAS(Y)P(1-Y) (0<Y<.3) ALLOYS; II) FABRICATION OF 5, 7, 10, 15, AND 20MM DIAMETER IN7GA3ASINAS.2P.8 DETECTORS FOR 2.1UM UPON 3" DIAMETER INP SUBSTRATES; III) OPTIMIZATION OF LARGE QUADRANT DETECTORS FOR 2.1UM; IV) DELIVERY OF FIVE-15MM AND FIVE-20MM DIAMETER DETECTORS FOR 2.1UM WITH D* \ 10(12)CM(HZ)(1/2/W) AT 300 DEG K AND 10-50NSEC. SPEEDS.