High Resistivity Tin Oxide for CdTe PV Cell Electrodes

50552-98-I High Resistivity Tin Oxide for CdTe PV Cell Electrodes--ITN Energy Systems, Inc., 12401 West 49th Avenue, Wheat Ridge, CO 80033-1927; (303) 420-1141 Dr. Peter Meyers, Principal Investigator Ms. Janet L. Casteel, Business Official DOE Grant No. DE-FG03-98ER82601 Amount: $74,754 CdTe-based photovoltaic (PV) devices are limited in conversion efficiency by the CdS window layer which absorbs light but does not convert it into electricity. High efficiency PV laboratory cells minimize CdS absorption by using thin CdS layers, but too thin a layer of CdS can lead to low voltage devices and yield problems. Thin CdS is therefore not practical for large area, high throughput manufacturing. This project will develop a high resistivity tin oxide (HRT) coating on the transparent front electrode of the CdTe PV device. When properly formulated and deposited, HRT enables use of CdS films which absorb minimal amounts of solar insolation while producing PV devices with high voltage. This project will identify the specific electrical and optical properties required of HRT to produce CdTe/thin CdS devices, develop formulations and deposition procedures to produce films with the desired properties. The technical and economic potential will be evualuated for incorporation of HRT into commercial production. Commercial Applications and Other Benefits as described by the awardee: HRT will increase efficiency and decrease costs, thereby providing a significant boost to CdTe PV¿s emergence into the 126 MW/yr commercial PV market and advance DOE¿s PV program goals of achieving 15% module efficiency at $0.50/Wp._