A 3-40 GHz TDD RF Beamforming Chip with 8Rx and 4Tx channels

We propose the development of a 3-40 GHz TDD RF beamforming chip with 16Rx and 8Tx channels meeting the requirements set forth in the Navy SBIR Direct-to-Phase II solicitation. The chip will be based on advanced SiGe (Silicon-Germanium) BiCMOS (bipolar-complementary metal-oxide semiconductor) technology with low noise figure and high P1dB capabilities, and with a novel I/Q network and vector modulator capable of achieving a 13:1 bandwidth at 3-40 GHz. It is expected that phase and amplitude trim will be used in order to result in 6-bit phase shifter, and with 25 dB of gain control, both at 3-40 GHz. The chip will contain all the channels required for dual-beam Rx and single beam transmit capabilities and will be fabricated on-shore using US foundries, bumped on-shore using US packaging and bumping facilities and tested on-shore using US equipment at 1 GHz to 50 GHz. Also, a PCB with 16 Rx ports and 8 Tx ports will be fabricated to test the chip, and a full measurement report is expected to be delivered with the chip. Also, as specified, an ICD (interface control document) detailing the SPI software for individual channel control will also be delivered to the Navy.