SBIR/STTR Research Award
High Power Diamond Transistors with Electrical and Optical Gate Control
Award amount
$1,994,868Program and phase
SBIR · Phase IIAward year
2024Award details
- Awarding agency
- Department of Energy
- Branch
- ARPA-E
- Recipient company
- GREAT LAKES CRYSTAL TECHNOLOGIES INC
- Proposal award date
- 2024-05-10
- Contract end date
- 2026-05-09
- UEI
- HNVFQ4KLBMF4
- Solicitation number
- DE-FOA-0002999
- Topic code
- DE-FOA-0002999
Research abstract
Great Lakes Crystal Technologies is developing a diamond semiconductor transistor to support the control infrastructure needed for an energy grid with more distributed generation sources and more variable loads. The proposed transistor takes advantage of the properties of diamond, an ultrawide-bandgap semiconductor material with better thermal management, lower power loss, and higher operating voltage than conventional materials. The device switches can be controlled by light source and electrical means, improving electromagnetic interference immunity.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Diamond Materials for Quantum Technology Applications
- Next Generation Diamond Materials for High-Resolution Quantum Sensors
- Diamond Rheometer for the Measurement of High-Temperature Molten Salts
- Innovative Crystalline Diamond Detector
- Next Generation Diamond Drumhead X-Ray Optics
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Ultrafast, Autonomous Grid Protection Using Linear Photonic Switching
- Medium-Voltage Optoelectronic Power IC Building Block
Research funding history
13 SBIR/STTR records share this UEI (2020–2024). Reported award amounts total $7,605,124. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Energy, Department of Defense, National Aeronautics and Space Administration