SBIR/STTR Research Award

Development of a High-temperature (>1200 °C) Crystal Growth Furnace toward Semiconductor In-Space Production Applications in LEO for Terrestrial Use

Award identifier 93154f07b05349eff863698c68a087a03d665d59b0faab29dc5b905ecec9126eAwarding agency National Aeronautics and Space Administration

Award amount

$150,000

Program and phase

SBIR · Phase I

Award year

2024

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
ASTRAL FORGE, LLC
Proposal award date
2024-02-13
Contract end date
2024-08-21
UEI
WL7FE2RNGGX5
Solicitation number
IGNITE-2023-Phase 1
Topic code
Hi01

Research abstract

Astral Forge is a semiconductor start-up company with a focus on leveraging space environments to advance semiconductor crystal production. In our pursuit of technological innovation, we are directing our efforts towards the development of a high-temperature crystal growth furnace designed for in-space operation in LEO, with applications tailored for terrestrial use. The primary purpose of this technology, the high-temperature crystal growth furnace, is to enable the efficient and scalable synthesis of semiconductor materials with a specific initial focus on Gallium Nitride (GaN). Currently, there is no SOTA furnace in LEO capable of processing GaN ( process temp = 1450 C). GaN holds immense promise as a next-generation semiconductor, offering enhanced performance characteristics, particularly in terms of power efficiency and thermal tolerance, compared to conventional silicon technology. Our intended use of funding is dedicated to the research, development, and construction of this specialized high-temperature (ground unit) furnace optimized for LEO. This furnace will serve as the cornerstone of our endeavor, facilitating the production of high-quality GaN crystals in space, with the goal of delivering superior GaN wafers to Earth. In addition to GaN's semiconductor applications, our technology opens doors to a wide range of markets and industries that can benefit from the unique attributes of space-manufactured GaN wafers. These markets include aerospace, telecommunications, automotive, data centers, etc. By harnessing the advantages of microgravity crystal growth, we aim to provide GaN wafers of exceptional purity, larger size, and superior quality. These attributes will not only enhance the performance of GaN-based devices but also enable the development of entirely new GaN consumer products. Our technology targets diverse terrestrial markets while advancing semiconductor crystal quality and size, all made attainable through the unique environment of space.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

2 SBIR/STTR records share this UEI (2024). Reported award amounts total $1,049,803. Reported amounts are not federal obligations.

Phases: Phase II, Phase I

Agencies: National Aeronautics and Space Administration

Agency intelligence

National Aeronautics and Space Administration

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