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Award details
- Awarding agency
- National Aeronautics and Space Administration
- Branch
- Not reported
- Recipient company
- ASTRAL FORGE, LLC
- Proposal award date
- 2024-02-13
- Contract end date
- 2024-08-21
- UEI
- WL7FE2RNGGX5
- Solicitation number
- IGNITE-2023-Phase 1
- Topic code
- Hi01
Research abstract
Astral Forge is a semiconductor start-up company with a focus on leveraging space environments to advance semiconductor crystal production. In our pursuit of technological innovation, we are directing our efforts towards the development of a high-temperature crystal growth furnace designed for in-space operation in LEO, with applications tailored for terrestrial use.
The primary purpose of this technology, the high-temperature crystal growth furnace, is to enable the efficient and scalable synthesis of semiconductor materials with a specific initial focus on Gallium Nitride (GaN). Currently, there is no SOTA furnace in LEO capable of processing GaN ( process temp = 1450 C). GaN holds immense promise as a next-generation semiconductor, offering enhanced performance characteristics, particularly in terms of power efficiency and thermal tolerance, compared to conventional silicon technology. Our intended use of funding is dedicated to the research, development, and construction of this specialized high-temperature (ground unit) furnace optimized for LEO. This furnace will serve as the cornerstone of our endeavor, facilitating the production of high-quality GaN crystals in space, with the goal of delivering superior GaN wafers to Earth.
In addition to GaN's semiconductor applications, our technology opens doors to a wide range of markets and industries that can benefit from the unique attributes of space-manufactured GaN wafers. These markets include aerospace, telecommunications, automotive, data centers, etc. By harnessing the advantages of microgravity crystal growth, we aim to provide GaN wafers of exceptional purity, larger size, and superior quality. These attributes will not only enhance the performance of GaN-based devices but also enable the development of entirely new GaN consumer products. Our technology targets diverse terrestrial markets while advancing semiconductor crystal quality and size, all made attainable through the unique environment of space.
Technology keywords
Not reported
Other awards by this recipient
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Awards with the same topic code
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Research funding history
2 SBIR/STTR records share this UEI (2024). Reported award amounts total $1,049,803. Reported amounts are not federal obligations.
Phases: Phase II, Phase I
Agencies: National Aeronautics and Space Administration
Agency intelligence
National Aeronautics and Space Administration
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