SBIR/STTR Research Award
Advance manufacturing of N-face GaN
Award amount
$50,000Program and phase
STTR · Phase IAward year
2022Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- FUTURE SEMICONDUCTOR BUSINESS, INC.
- Proposal award date
- 2021-11-04
- Contract end date
- 2022-02-05
- UEI
- LSBKJTK7LDG3
- Solicitation number
- X21.B
- Topic code
- AF21B-TCSO1
Research abstract
N-face orientation (000Ä«) GaN-based high electron mobility transistors (HEMTs) facilitates very low specific resistance ohmic contacts and a natural confining electron back barrier over structures grown on the conventional Ga-face. For application of phot
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- InSITE (Integrated Surface Information Technology Environment)
- Inergy TACFI
- Automated Real-Time Cybersecurity for Edge Computing & IoT Devices
- High-Temperature High-Performance 3D-Printed Ceramics
- Optimizing Verified Content for High Level Defense Customer in Cloud Native Application Deployments
Research funding history
2 SBIR/STTR records share this UEI (2022). Reported award amounts total $306,000. Reported amounts are not federal obligations.
Phases: Phase I
Agencies: Department of Defense, National Science Foundation