Radiation-Tolerant High-Voltage, High-Power Electronics WBG Drain Engineered Transistor

In this project, we propose anbsp;1200 Volt Silicon super-junction power transistor with a Silicon-Carbide engineered drain to take advantage of the low on resistance performance from Wide Band Gap(WBG) materials. By further merging high volume Micro-Electro-Mechanical Systems (MEMS)manufacturing techniques to enable structures robust to harsh space radiation environments a new class ofvertical-power transistors are created. The merger of SJMOS structures-MEMS manufacturing techniques-WBG material creates SMW concepts enabling devices that in this case have the potential to sustain 1200Vblocking with no heavy-ion-induced permanent destructive effects upon exposure to high energy radiation of87 Mev-cm2/mg while delivering Rdson of 90milliohms at ID max = 40A. IceMOS will partner with theSchool of Earth and Space Exploration at ASUnbsp;to develop and demonstrate a novel SMWSilicon-Carbide Drain Engineered rad-hard super-junction Transistor.nbsp;nbsp;Phase I of the project will include design modeling, device simulation and analysis of SJMOS structuresembedded in hetro-junction Si/Si C material to create a Silicon-Carbide WBG drain. This SMW conceptdevice will be designed to block 1200V with low on-resistance. Additionally, several radiation hardeningtechniques applied to the Silicon super-junction structure and Si/Si C hetro-junction substrate to enhanceSEE and TID performance will be investigated. A 1200V SJMOS baseline device will be fabricated andcharacterized for radiation effects.nbsp;In Phase II with the physical mechanisms limiting heavy-ion-induced permanent destructive effects uponexposure to high energy radiation of 87 Mev-cm2/mg now understood from phase I and addressed, adevice designed to be capable of 1200V blocking and high current handling (40A) will be fabricated. andprototypes tested to demonstrate potential Rdson of 90 milliohms for improved power system efficiency.Targeted radiation hardness performance is SEE = 87 Mev-cm2/mg and TID = 300 Krads for this device.