SBIR/STTR Research Award
Nanoscale Vacuum Channel Transistor (NVCT) based Integrated Circuits for Inherently Radiation Hardened Electronics
Award amount
$124,920Program and phase
STTR · Phase IAward year
2021Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- CFD Research Corporation
- Proposal award date
- 2021-04-30
- Contract end date
- 2021-11-04
- UEI
- V3KCP1HNFM33
- Solicitation number
- 20.C
- Topic code
- MDA20-T004
Research abstract
Inherently radiation-insensitive device technologies offer a promising alternative for the development of reliable electronics for avionics and space systems. The CFD Research team proposes to investigate and develop radiation-tolerant electronic devices using Nanoscale Vacuum Channel Transistors (NVCTs) whose vacuum-based conduction channel will have negligible to no interference from radiation induced charges. The NVCT technology is in the early stages of development; therefore, we propose a comprehensive strategy to design, model, fabricate, and test NVCT devices and circuits for military applications. We will develop a scalable NVCT design and fabrication methodology; an adaptable NVCT device model; and an expandable circuit simulation platform. We will perform detailed electrical analyses and design optimization to actively improve the performance of the proposed devices/circuits. along with characterization of radiation tolerance to total ionizing dose, single event upset and single event latchup. This effort will lay the groundwork for sustainable development and maturation of NVCT technology towards higher technology readiness levels (TRLs) and fielded applications. Approved for Public Release |21-MDA-10789 (21 Apr 21)
Technology keywords
Not reported