SBIR/STTR Research Award

Nanoscale Vacuum Channel Transistor (NVCT) based Integrated Circuits for Inherently Radiation Hardened Electronics

Award identifier 4b709afebc1542e795ba0c5f3accf7b44682f0802a3408991184206ded77d41fAwarding agency Department of Defense · Missile Defense Agency

Award amount

$124,920

Program and phase

STTR · Phase I

Award year

2021

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
CFD Research Corporation
Proposal award date
2021-04-30
Contract end date
2021-11-04
UEI
V3KCP1HNFM33
Solicitation number
20.C
Topic code
MDA20-T004

Research abstract

Inherently radiation-insensitive device technologies offer a promising alternative for the development of reliable electronics for avionics and space systems. The CFD Research team proposes to investigate and develop radiation-tolerant electronic devices using Nanoscale Vacuum Channel Transistors (NVCTs) whose vacuum-based conduction channel will have negligible to no interference from radiation induced charges. The NVCT technology is in the early stages of development; therefore, we propose a comprehensive strategy to design, model, fabricate, and test NVCT devices and circuits for military applications. We will develop a scalable NVCT design and fabrication methodology; an adaptable NVCT device model; and an expandable circuit simulation platform. We will perform detailed electrical analyses and design optimization to actively improve the performance of the proposed devices/circuits. along with characterization of radiation tolerance to total ionizing dose, single event upset and single event latchup. This effort will lay the groundwork for sustainable development and maturation of NVCT technology towards higher technology readiness levels (TRLs) and fielded applications. Approved for Public Release |21-MDA-10789 (21 Apr 21)

Technology keywords

Not reported

Agency intelligence

Department of Defense

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