SBIR/STTR Research Award

Compact, lightweight, ultralow-cost OLED-based SWIR sensors

Award identifier 55f6260edf95ba75035d51bfac5a331cbef23e1604443482969d1d938831e5baAwarding agency Department of Defense · Air Force

Award amount

$145,788

Program and phase

STTR · Phase I

Award year

2021

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
GHOST DISPLAY TECHNOLOGIES, LLC
Proposal award date
2021-01-06
Contract end date
2021-07-08
UEI
LJ5SRBTJ1XH5
Solicitation number
X20.D
Topic code
AFX20D-TCSO1

Research abstract

Current SWIR sensor technologies are extremely expensive technology because (1) SWIR-sensitive III-V compound semiconductors ALWAYS require an expensive epitaxial growth process only suitable for small area applications, (2) the epitaxial-grown SWIR photodetector MUST be pixelized by a complicated expensive semiconductor photolithography process, and (3) the SWIR photodetector pixel arrays MUST be connected to Si-based readout integrated circuits (ROIC) by problematic chip bonding processes for making IR imaging, thus resulting in the tremendous price of more than $20,000. Due to this traditional ROIC integration method which is very challenging to make compact and lightweight sensors with fine pixel size, furthermore, the final SWIR sensors are bulky and heavy, resulting in a limited pixel resolution of below 1M pixels. Therefore, the applications of the traditional SWIR sensors have been severely limited. In this proposal, we would like to develop compact, lightweight, high-resolution, ultralow-cost organic light-emitting diode (OLED)-based short wave infrared (SWIR) image sensor by using an innovative optical ROIC integration approach. In this unique OLED-based SWIR image sensors, inexpensive Commercial-Off-The-Shelf (COTS) visible image sensors like a complementary metal-oxide-semiconductor (CMOS) will be used as low-cost readout integrated circuit (ROIC). Our innovative OLED-based SWIR sensor structure does NOT require expensive epitaxial film deposition processes, expensive semiconductor photolithography pixelation processes, and problematic chip bonding processes. This revolutionary OLED-based SWIR image sensors will be fabricated by simply stacking a SWIR sensitive OLED only optically (not electronically) on an inexpensive COTS visible image sensor like a CMOS image sensor. A SWIR sensitive OLED can convert a SWIR image to a visible image without pixelation in the device. A SWIR sensitive OLED is basically an OLED with an epitaxial-free solution-processed PbS colloidal quantum dot (CQD) as the SWIR sensitizing layer and only emits visible light under SWIR illumination. In this novel OLED-based SWIR image sensor structure, the SWIR sensitive OLED will function as the thin layer to convert invisible SWIR images to visible images because the total thickness of the SWIR sensitive OLED is extremely thin ( over 100 M pixels) SWIR (0.7-3 ?m) image sensor at a significantly low-cost (<$500).

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

4 SBIR/STTR records share this UEI (2019–2025). Reported award amounts total $543,788. Reported amounts are not federal obligations.

Phases: Phase I

Agencies: Department of Defense, Department of Energy

Agency intelligence

Department of Defense

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