SBIR/STTR Research Award

High Power, High Beam Quality Tapered Diode Lasers for Direct Use as High Energy Lasers

Award identifier 81dc6caa7d301f42f034450d62fbaea336885ded6d742df609b4be4c63f641b8Awarding agency Department of Defense · Army

Award amount

$549,990

Program and phase

SBIR · Phase II

Award year

2020

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
FREEDOM PHOTONICS LLC
Proposal award date
2020-07-08
Contract end date
2022-03-21
UEI
FQ98KK1G9199
Solicitation number
19.1
Topic code
A19-085

Research abstract

This Phase 2 program seeks to demonstrate and deliver chip-on-submount tapered diode laser devices operating in the 9xx-10xx nm band and based on our high power epitaxy in this wavelength range.  The scope of work includes simulation, design, growth, fabrication, bond and test.  Two rounds of development are planned over the 24 month effort.  We will be doing FAC lens attach on these devices as well as performing a small (~20 unit) step stress accelerated lifetest.  No facet passivation is anticipated.  The technical objective at the end of the program is >10W, >63% E/O with M2 < 1.1.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

196 SBIR/STTR records share this UEI (2005–2023). Reported award amounts total $74,583,672. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, Environmental Protection Agency, Department of Agriculture

Agency intelligence

Department of Defense

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