SBIR/STTR Research Award
Precision Ion Energy & Flux Control For In-Situ Magnetron Deposition & Etching For Plasma-Assisted Material Synthesis At The Atomic Scale
Award amount
$205,000Program and phase
STTR · Phase IAward year
2020Award details
- Awarding agency
- Department of Energy
- Branch
- Not reported
- Recipient company
- STARFIRE INDUSTRIES, LLC
- Proposal award date
- 2020-06-29
- Contract end date
- 2021-03-28
- UEI
- GZ2MY2S55JW9
- Solicitation number
- DE-FOA-0002146
- Topic code
- 29a
Research abstract
This Phase I project addressed the need to improve our understanding and scientific knowledge of the temporal evolution of ion energy, flux and directionality resulting from the application of a rapid voltage reversal on a dense plasma formed by high-power impulse magnetron sputtering. There is evidence that the positive pulse is separated into two regions: (1) a “Short” Kick where the resulting potential appears across the dense magnetic confinement zone and serves to accelerate ions award proportional to the gradient in B field, and (2) a “Long” kick where the potential diffuses across field lines and raises the plasma potential in the chamber resulting in local plasma sheaths around grounded surfaces. A Short Kick would yield ions with energy that are independent of the substrate—for example insulating glass or ceramics that would charge up under normal low-temperature sheath mechanics would still see directed ion flux from the short kick. This phenomenon needs to be studied and characterized due to its potential application for sputter coating of architectural glass, semiconductors, advanced microelectronics packaging and energy applications. This will be achieved through a University collaboration on precompetitive fundamental research will result in publications and broad dissemination via conferences, journals and centers. The major benefit of the Positive KickTM is the ability to allow HiPIMS processes with insulating substrates where before RF bias potentials were swamped from the massive particle pulse from a 100x current density pulse. This technique is an enabler for processing insulating substrates. In terms of significance, the technique can improve adhesion, surface cleaning, residual stress material etching and perform oxidation/nitridation/carbonation steps with deposition for reactive applications. A technology that can both simplify and speed up the production of this cable would be an invaluable tool for microelectronics industries, energy production and storage, and advanced coatings for optical materials. The SBIR program will also support emerging small businesses and job creation in the Midwest.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Replacing Co-60 with Retrofit Low-Cost DC Electron Linacs for Pallet-Level X-Ray Irradiation for Existing Facilities
- PVD manufacturing process for inner protective liners enabling advanced cladding compositions to reduce fuel-cladding chemical interactions, corrosion and permeation
- In-Line Metrology for Real-Time Manufacturing of Thin-Film PVD ATF Coatings Using IMPULSE« HiPIMS + Positive Kick┐
- Downhole Wireline PGNAA Elemental Analysis Probe Using nGen«
- Multilayer Thin-Film Coatings for Titanium Electrolyzer Bipolar Plates Using Next-Generation Quasi-Conformal PVD with Precision Ion Energy Control