SBIR/STTR Research Award

Precision Ion Energy & Flux Control For In-Situ Magnetron Deposition & Etching For Plasma-Assisted Material Synthesis At The Atomic Scale

Award identifier 14d27fe03bf582d2a21d07d4539b51a0597c3ab9f5e3d05adb73f6aa75b58a45Awarding agency Department of Energy

Award amount

$205,000

Program and phase

STTR · Phase I

Award year

2020

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
STARFIRE INDUSTRIES, LLC
Proposal award date
2020-06-29
Contract end date
2021-03-28
UEI
GZ2MY2S55JW9
Solicitation number
DE-FOA-0002146
Topic code
29a

Research abstract

This Phase I project addressed the need to improve our understanding and scientific knowledge of the temporal evolution of ion energy, flux and directionality resulting from the application of a rapid voltage reversal on a dense plasma formed by high-power impulse magnetron sputtering. There is evidence that the positive pulse is separated into two regions: (1) a “Short” Kick where the resulting potential appears across the dense magnetic confinement zone and serves to accelerate ions award proportional to the gradient in B field, and (2) a “Long” kick where the potential diffuses across field lines and raises the plasma potential in the chamber resulting in local plasma sheaths around grounded surfaces. A Short Kick would yield ions with energy that are independent of the substrate—for example insulating glass or ceramics that would charge up under normal low-temperature sheath mechanics would still see directed ion flux from the short kick. This phenomenon needs to be studied and characterized due to its potential application for sputter coating of architectural glass, semiconductors, advanced microelectronics packaging and energy applications. This will be achieved through a University collaboration on precompetitive fundamental research will result in publications and broad dissemination via conferences, journals and centers. The major benefit of the Positive KickTM is the ability to allow HiPIMS processes with insulating substrates where before RF bias potentials were swamped from the massive particle pulse from a 100x current density pulse. This technique is an enabler for processing insulating substrates. In terms of significance, the technique can improve adhesion, surface cleaning, residual stress material etching and perform oxidation/nitridation/carbonation steps with deposition for reactive applications. A technology that can both simplify and speed up the production of this cable would be an invaluable tool for microelectronics industries, energy production and storage, and advanced coatings for optical materials. The SBIR program will also support emerging small businesses and job creation in the Midwest.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Agency intelligence

Department of Energy

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