SBIR/STTR Research Award

Pervasive Manufacturing Infrastructure of GaN >20A/>600V Qualified Electric Device Vehicle Power Electronics

Award identifier b62d72a17c725559ffff73c30cf5dd9d34b344f6751658e20432db09cd2f1809Awarding agency Department of Energy

Award amount

$200,000

Program and phase

STTR · Phase I

Award year

2020

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
STRUCTURED MATERIALS INDUSTRIES, INC.
Proposal award date
2020-06-29
Contract end date
2021-03-28
UEI
WMLSF59AE7E1
Solicitation number
DE-FOA-0002146
Topic code
12b

Research abstract

The efficiencies of Electric Vehicle (EV) and Hybrid Electric Vehicle (HEV) need to be improved in order to reduce reliance on hydrocarbon fuel-based transportation systems and thus reduce CO2 emissions. For this to happen, high voltage onboard power electronics need to be greatly improved in terms of performance and cost. Currently, vehicle power electronics predominantly utilize silicon-based power semiconductors switch technology based on MOSFET, and IGBT devices. Silicon power semiconductor devices have several limitations including high losses relatively low bandgap, low electrical field breakdown requiring very thick material growth for high voltage operation which results in high resistance and associated conduction losses. GaN based devices are believed to be the best solution to this problem. The problem can be addressed by replacing silicon-based devices with the wide band gap (WBG) semiconductor (Silicon Carbide (SiC) and Gallium Nitride (GaN)) devices. The WBG d semiconductors devices are much more efficient (lower on resistance and higher frequency operation) and can withstand higher temperatures than Si components. Hence, devices made of WBG semiconductors could decrease system costs by reducingthe requirements for complex thermal management systems. In Phase I project the issues related to the economical production of uniform high quality GaN device materials on large area substrates (4 inches and beyond) will be addressed by designing tools to grow desired devices on large area substrates and by developing the efficient power devices that deliver desired at high currents (>20A) and higher voltages (>600V); however, their production costs remains high and need to be reduced. The GaN devices are required for EVs and EHVs, telecommunications, industrial, automotive, renewables, consumer and enterprise, military, defense, and aerospace and medical applications. The GaN devices have broad commercial applications for making efficient SMPS (Consumer chargers & adapters), EV, EV chargers & battery management, Cleantech (solar, battery chargers), UPS, motor control, small electric mobility systems (bikes, scooters, skateboards or other similar systems), wireless power transmission, and audio amplifications, among many other applications.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

177 SBIR/STTR records share this UEI (1992–2024). Reported award amounts total $45,517,958. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration, National Science Foundation, Department of Commerce, Department of Homeland Security

Agency intelligence

Department of Energy

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