High-Power Inductive Modulator for Narrowband RF Generation

Narrowband radio frequency emitters, despite their widespread industrial use and need for greater range, have not reached their limit in power output and SWAP-C2 considerations. Standing on a foundation of strong preliminary simulations (see Section IV) the investigators will show that a silicon-based drift step-recovery diode (Si-DSRD) system operated with non-linear reactive components can and will demonstrate all of the N201-010 phase I requirements. The proposed work is a mix of research and development. The research aims to find the limits of DSRD based pulse system frequency modulation that go beyond the phase I requirements while the objective of the development effort is to build, test and demonstrate a transition-capable Si-DSRD system that meets the phase I, and eventually the phase II, specific requirements.