SBIR/STTR Research Award

Ultra-Clean Graphene Coating for Robust Operation of High Brightness Photocathodes

Award identifier 3cd432f27b381aae5a23a263aaf54a0bcc64605e21e343a84e022df967947301Awarding agency Department of Energy

Award amount

$200,000

Program and phase

SBIR · Phase I

Award year

2020

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
QRONA TECHNOLOGIES LLC
Proposal award date
2020-02-18
Contract end date
2020-11-17
UEI
CYFCUM6WJT17
Solicitation number
DE-FOA-0002145
Topic code
09b

Research abstract

The next generation of free electron lasers FELs) and the small-scale electrons accelerators designed to perform ultra-fast microscopy and diffraction experiment rely on the production of new electron guns with ultrahigh brightness cathodes. High-efficiency semiconductor e.g., GaN-based) photocathodes have been studied for this application, and there have been some advances in reducing the mean transverse energy of their emitted electrons, which ultimately limits the performances of these electron guns. However, no significant progress has been reported in solving another major problem with semiconductor photocathodes, which is their high sensitivity to surface contaminations, and hence the requirement for operation in ultrahigh vacuum UHV) conditions. In general, UHV conditions are too restrictive or canbe incompatible with respect to construction and maintenance of high-intensity electron guns. As a result, for a wide range of photon energies, photocathodes with both high quantum efficiency and long-life operation under practical conditions are not currently available. In this SBIR project, Qrona Technologies will collaborate with both high energy physics HEP) and photocathode expert groups at Cornell University and UC Berkeley on 1) fabrication of In)GaN photocathodes with very low thermal emittance, by tuning the bandgap energy for operation near threshold, and 2) development of a UHV encapsulation process for high-performance photocathodes using a protective graphene layer. This will enable both long-life and high-efficiency operation of fast In)GaN-based photocathodes in the non-ideal vacuum conditions inside high-brightness electron guns, for DOE projects as well as other scientific, industrial, and defense applications. In addition to DOE applications in high energy and nuclear physics experiments, the high-performance, long-life photocathodes proposed in this work can provide a springboard to commercialization of two main products - an efficient electron emitter and a sensitive photodetector. These products have a great commercialization potential for many applications, such as ultra-violet imaging, spectroscopy, maskless electron lithography, and thin-film metrology.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

10 SBIR/STTR records share this UEI (2018–2025). Reported award amounts total $1,680,448. Reported amounts are not federal obligations.

Phases: Phase I

Agencies: Department of Energy, National Aeronautics and Space Administration, Department of Defense

Agency intelligence

Department of Energy

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