SBIR/STTR Research Award

Silicon Carbide-based Power Electronics for Small Fission Reactors

Award identifier 72a9f2bbd5761e5e9d3eb6ce5092e43478692d35d58f9cdde92dbbda8bbaa138Awarding agency National Aeronautics and Space Administration

Award amount

$124,951

Program and phase

SBIR · Phase I

Award year

2019

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
CFD Research Corporation
Proposal award date
2019-08-19
Contract end date
2020-02-18
UEI
V3KCP1HNFM33
Solicitation number
SBIR_19_P1
Topic code
Z1

Research abstract

Fission power systems (FPS) are a candidate power source for long duration NASA surface missions to the Moon and Mars, and offer significant advantages over competing options, including longer life, operational robustness, and mission flexibility. Electronics associated with the power conversion and power management and distribution (PMAD) systems in FPS have to operate reliably under high temperature (100s of deg C), high power (1-10 kWe), and severe radiation. Silicon carbide (SiC) is a promising solution with superior electronic properties for power applications. SiC devices offer higher temperature operation, higher breakdown voltages, and higher power conversion efficiency than silicon devices. However, vulnerability to heavy-ion induced failure and uncertainty in response to nuclear radiation are challenges facing FPS applications of SiC technology. CFDRC, Vanderbilt University and Wolfspeed propose a modeling and experiment-based approach using commercial SiC technology to address this challenge. In Phase I, we will use the Geant4/MRED radiation transport code to calculate the actual neutron and gamma dose experienced by FPS electronics, derive corresponding inputs and perform TCAD modeling of SiC power diodes and MOSFETs for insight into physical mechanisms behind their response, and develop detailed radiation testing plans. We will perform x-ray testing of SiC power devices (100-1000 kRad(Si)) to obtain total dose response data. In Phase II, we will perform additional neutron, gamma, and heavy-ion tests to characterize the response of SiC devices and selected circuit versus temperature and bias. We will leverage parallel projects to analyze heavy-ion induced single-event effects in SiC diodes and MOSFETs. TCAD and mixed-mode modeling will be done to further understand radiation and temperature-dependent mechanisms and to investigate design solutions for increased radiation tolerance. Promising solutions will be prototyped, tested, and delivered to NASA.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

947 SBIR/STTR records share this UEI (1987–2026). Reported award amounts total $350,893,199. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Health and Human Services, National Science Foundation, Department of Commerce, Department of Energy

Agency intelligence

National Aeronautics and Space Administration

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