A Silicon Carbide Based Bidirectional DC-DC Converter

Power system upgrades for next generation ground combat vehicles require technology advances such as higher operating temperature, greater power density, and increased functionality. While many bidirectional DC-DC converters are available on the market, inefficiency and legacy semiconductor technologies require active thermal management and large package sizes. Silicon Carbide based power electronic devices offer advantages over silicon devices, especially for high voltage buses. Creare is currently developing a Silicon Carbide based DC-DC converter that operates at high voltage, power, and temperatures. Silicon Carbide Metal Oxide Field Effect Transistors enable Creare’s very innovative circuit topology, and Creare’s innovative thermal management enables operation at very high ambient temperature while maintaining adequately low semiconductor junction temperatures. This approach minimizes size and maximizes lifetime and reliability. During Phase I we demonstrated feasibility with comprehensive design and analysis and demonstration of a subscale prototype. Based on this successful feasibility demonstration, we recommend proceeding with Phase II, where we will finalize production preparations, culminating with demonstration of a full-scale prototype in a relevant environment to support the Next Generation Combat Vehicle Electrical Power Architecture. Creare’s DC-DC converter offers the benefits of higher power density, reduced cooling demands, and a simpler interface when compared to existing products.