SBIR/STTR Research Award

Nanostructured GaAs Photocathodes for Light Trapping and Ion Damage Tolerance

Award identifier d432dbb1dca2bdf34330c24feeeac304f733534b2c6526e726718ecf6db61e6eAwarding agency Department of Energy

Award amount

$149,931

Program and phase

SBIR · Phase I

Award year

2019

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
EUCLID BEAMLABS LLC
Proposal award date
2019-02-19
Contract end date
2019-11-18
UEI
UUP7AMSJBLL2
Solicitation number
DE-FOA-0001940
Topic code
30d

Research abstract

Photocathodes provide laser-triggered pulses with high peak currents. High average currents require high QE to avoid laser-heating damage. However, QE in DC guns decays with extracted charge due to back-bombardment from gas ionized by the emitted electron beam. Thus higher current increases back-bombardment and shortens life proportionally to extracted charge. This proposal addresses the charge-limit, following advancements at JLab, by patterning a Mie array of nanopillars on GaAs. Cathode lifetime will increase significantly: non-normal nanopillar surfaces receive low ion bombardment, but will contribute most of the QE by appropriately tuning the dipole Mie resonance. Second, nanostructures will improve QE via resonant optical properties, because nearly 50% more photons can be absorbed versus flat cathodes. A higher surface-to-absorption-volume ratio also means photoexcitation at favorably shallow depth for polarization. We anticipate nanostructured GaAs will exhibit high QE and good spin polarization while exceeding 5,000 Coulomb charge lifetime. In Phase I, simulations predicting QE enhancement will be performed using existing GaAs Monte Carlo models. A series of GaAs and strained superlattice cathodes grown in existing dedicated MBE facilities will be patterned by Euclid with nanopillar arrays using e-beam lithography. Euclid and Jlab personnel will test the initial cathodes at JLab for optical reflectance, quantum efficiency, polarization ratio, and tolerance for ion damage. At the end of Phase I, we will quantitatively conclude which nanostructures promise optimized QE enhancement and lifetime extension to be optimized for production in Phase II of the project. The potential market for high QE, ion-damage-tolerant GaAs photocathodes is significant. Spin-polarized photocathodes are essential at proposed electron-ion collider facilities such as JLEIC and eRHIC, and advancements would also affect existing facilities such as JLab's CEBAF. In addition, high QE and long-lived photocathodes are of broader interest including SRF facilities such as SLAC's LCLS-II, Fermilab's IARC, and RF linac based FELs for industrial applications. Spin-polarized transmission electron microscopy will also benefit from advanced spin-polarized photocathodes.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

38 SBIR/STTR records share this UEI (2015–2025). Reported award amounts total $17,194,412. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Energy, Department of Defense, Department of Health and Human Services, Department of Homeland Security, National Aeronautics and Space Administration

Agency intelligence

Department of Energy

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