1. THREE 4H-SIC WAFER SHALL BE 3" DIA., 8? OFF-AXIS, LESS THAN 15 CM-2 MICROPIPE DENSITY, OF HIGH-PURITY AN…

Award details are derived from public USAspending.gov records. Not a bid recommendation.

Award details

Award ID: NNC11VB89P
Contractor
Awarding agency: National Aeronautics and Space Administration
Sub-agency / office: National Aeronautics and Space Administration
Award amount: $0
Period of performance: Aug 15, 2011 – Nov 15, 2011
NAICS: 334413 — Semiconductor and Related Device Manufacturing
PSC: PSC 9390
Place of performance: NC

Public award description

1. THREE 4H-SIC WAFER SHALL BE 3" DIA., 8? OFF-AXIS, LESS THAN 15 CM-2 MICROPIPE DENSITY, OF HIGH-PURITY AND SEMI-INSULATING (RESISTIVITY>105 OHM-CM). BOTH SIDES POLISHED TO EPITAXIAL GROWTH STANDARD. ON THE SI FACE SHALL BE CVD GROWN 1?M N-TYPE 4H-SIC EPILAYER THAT IS NITROGEN DOPED GREATER 1 X 1019 CM-3. 2. THREE 4H-SIC WAFER SHALL BE 3" DIA., 8? OFF-AXIS, LESS THAN 15 CM-2 MICROPIPE DENSITY, OF HIGH-PURITY AND SEMI-INSULATING (RESISTIVITY>105 OHM-CM). BOTH SIDES POLISHED TO EPITAXIAL GROWTH STANDARD. ON THE SI FACE SHALL BE CVD GROWN 0.5?M N-TYPE 4H-SIC EPILAYER THAT IS NITROGEN DOPED GREATER 1 X 1019 CM-3. 3. TWO N-TYPE 4H-SIC WAFER SHALL BE 3" DIA., 4 OFF-AXIS, .015-.028 OHM-CM, LOW MICROPIPE DENSITY (<=15 CM-2). BOTH SIDES POLISHED TO EPITAXIAL GROWTH STANDARD.

Source: USAspending.gov

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